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  • RPI SCOREC - Technical Reports
    viscous incompressible fluid or a single phase elastic solid as limiting cases of a biphasic material Interface boundary conditions allow the solution of problems involving combinations of biphasic fluid and solid regions To incorporate these conditions the volume weighted mixture velocity is introduced as a degree of freedom at interface nodes so that the kinematic continuity conditions are satisfied by conventional finite element assembly techniques Results comparing our numerical method

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=83 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    mechanism for TEOS Si OC2H5 4 pyrolysis to deposit SiO2 which had been applied successfully to reactor scale simulation does not correctly predict the low step coverage over trenches observed under short reactor residence time conditions One apparent discrepancy between the mechanism and profile evolution observations is a reduced degree of sensitivity of the deposition rate to the presence of reaction products i e the byproduct inhibition effect is underpredicted

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=84 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    of the slurry The pad deformation is governed by the classical linear elasticity equations The porous nature of the pad is accounted for by the Reynolds equation of hydrodynamic lubrication for thin film flow The linkage between the solid contact stress and the effective fluid film is through a model that relates the contact pressure of the pad asperities and the effective surface separation distance The pressure predictions of this

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=85 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    M O Bloomfield S Soukane and T S Cale Title Applications of Plasma Processes in Microelectronics Year 1999 Pages Editor Abstract Selected applications of plasma processes in deposition and etch operations used during the fabrication of integrated circuits are discussed

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=87 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    feature profile evolution across wafers during processing using equipment scale operating conditions is one important goal of process engineers We present an integrated approach for simulating the multiple length scales needed to address this problem for thermal CVD processes In this approach continuum models on the reactor scale and mesoscopic scales are coupled tightly with ballistic transport models on the feature scale to predict micro and macro loading effects in

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=88 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    major sections In the first section we consider thermal processes The first process considered in this section is the chemical vapor deposition CVD of SiO2 from TEOS tetraethoxysilane We discuss the use of film profile information to help decide between and to help refine kinetic models The second example deals with thin film flow of doped glasses for planarization applications and demonstrates model calibration The second major section demonstrates the state of topography simulation for plasma processes We demonstrate the use of physically motivated models that require calibration using experimental data for a given set of operating conditions We first consider the plasma enchanced chemical vapor deposition PECVD of silicon dioxide from TEOS and oxygen mixtures PETEOS We then consider ionized physical vapor deposition IPVD of copper incorporating results of new calculations on the interactions of gas phase species with the surface As the last example in this section we discuss a reactive ion etch RIE model The last major section presents four applications First programmed rate CVD is discussed in some detail in order to demonstrate how feature scale modeling can be used in process development Next the RIE model is used to demonstrate aspect ratio dependent etching and

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=89 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    processing as well as some opportunities in the area Both case studies involve programmed rate chemical vapor deposition PRCVD which is a CVD process in which conditions are systematically changed during deposition in order to enhance either processing properties or resulting film properties In the tungsten study quantitative simulations based on fundamental transport and reaction modeling and a continuum film representation are used to guide experiments that demonstrate how PRCVD can provide significantly greater throughput than conventional constant rate CVD CRCVD We start the deposition process at a much higher temperature compared to a CRCVD process then decrease the temperature during deposition We achieve throughput increases of about a factor of three with more improvement clearly obtainable In addition to the increase in throughput the properties of the PRCVD films are equal to or superior to CRCVD films The aluminum PRCVD case study demonstrates some opportunities for materials modeling The protocols used are based upon qualitative models of nucleation and film growth as there are no simulators that predict microstructure and film properties Nevertheless we demonstrate that the PRCVD processes designed using qualitative models can yield films with better properties than CRCVD processes PRCVD films can have higher nuclei densities

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=90 (2015-07-15)
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  • RPI SCOREC - Technical Reports
    Editor G S Sandhu H Koerner M Murakami Y Yasuda and N Kobayashi Abstract Transport and reaction submodels needed for physics based process simulations will continue to be developed using experiments performed on structures that are 2d combined with three dimensional 3d transport simulations i e 3d 2d simulations Three dimensional device structures will be generated using 3d 3d topography simulations using algorithms that emphasize robustness We present two case

    Original URL path: http://www.scorec.rpi.edu/reports/view_report.php?id=91 (2015-07-15)
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